Profesör BEŞİRE GÖNÜL
Profesör
BEŞİRE GÖNÜL
GAZİANTEP ÜNİVERSİTESİ
MÜHENDİSLİK FAKÜLTESİ
FİZİK MÜHENDİSLİĞİ
Fen Bilimleri ve Matematik Temel AlanıFizikOptoelektronikYoğun Madde FiziğiYarı İletkenler
YÖK Akademik
Scopus
Google Akademik
ORCID
WoS
- bgonul@gantep.edu.tr
- 2214
Eğitim Bilgileri
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Doktora
1991 - 1995University of Surrey
- İNGİLTERE
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Yüksek Lisans
1989 - 1991GAZİANTEP ÜNİVERSİTESİ
MÜHENDİSLİK FAKÜLTESİ
FİZİK MÜHENDİSLİĞİ BÖLÜMÜ
KATIHAL FİZİĞİ ANABİLİM DALI- TÜRKİYE
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Lisans
1982 - 1988GAZİANTEP ÜNİVERSİTESİ
MÜHENDİSLİK FAKÜLTESİ
FİZİK MÜHENDİSLİĞİ BÖLÜMÜ
- TÜRKİYE
Akademik Bilgileri
2005
MÜHENDİSLİK FAKÜLTESİ
FİZİK MÜHENDİSLİĞİ BÖLÜMÜ KATIHAL FİZİĞİ ANABİLİM DALI
2000 - 2005
MÜHENDİSLİK FAKÜLTESİ
1996 - 1996
MÜHENDİSLİK FAKÜLTESİ
1996 - 2000
MÜHENDİSLİK FAKÜLTESİ
Makaleler
23 ADET1 |
Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates
ÜNSAL ÖMER LÜTFİ,GÖNÜL BEŞİRE
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2 |
Revealing the effects of nitrogen on threshold current density in GaNxAsyP1−x−y/GaP/AlzGa1−zP type I QW laser structures by hydrostatic pressure
Ünsal Ömer Lütfi,GÖNÜL BEŞİRE
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3 |
Modeling of the atomic structure and electronic properties of amorphous GaN1 x Asx
Bakir Kandemir E, Gönül B, Barkema G T, Yu K.M. , Walukiewicz W. , Wang L.W.
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4 |
A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaNxAsyP1-x-y/GaP QWs on GaP substrates
Ünsal Ömer Lütfi,GÖNÜL BEŞİRE,Temiz Mehmet
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5 |
An Exactly Solvable Algebraic Model for Single Quantum Well Treatments
GÖNÜL Bülent, ÜNSAL Ömer Lütfi, GÖNÜL Beşire
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6 |
The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for 001 and 111 orientations
Köksal K, Gönül B
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7 |
An analysis of the effect of nitrogen and a screened by free carriers Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN
Köksal K, Gönül B
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8 |
The critical layer thickness of InGaNAsSb QWs on GaAs and InP substrates for 001 and 111 orientations
Köksal K, Gönül B, Oduncuoğlu M
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9 |
Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations
KÖKSAL KORAY,GÖNÜL BEŞİRE,ODUNCUOĞLU MURAT
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10 |
A theoretical investigation of carrier and optical mode confinement in GaInNAs QWs on GaAs and InP substrates
Köksal K, Gönül B
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11 |
Comparison of the band alignment of strained and strain compensated GaInNAs QWs on GaAs and InP substrates
Gönül B, Köksal K, Bakır E
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12 |
Analysis of the band alignment of highly strained indium rich GaInNAs QWs on InP substrates
Gönül B, Bakır E, Köksal K
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13 |
A Theoretical Comparison of the 1 3 doped Quantum well Lasers for different concentrations
Oduncuoğlu M, GÖNÜL B
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14 |
A Theoretical Comparison of the Band Alignment of Conventionally Strained and Strain compensated Phosphorus Aluminum and Nitrogen based 1 3 QW Lasers
GÖNÜL B, Koçak F, Toktamış H, Oduncuoğlu M
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15 |
Theoretical Comparison of Pressure Dependence of Threshold Current of Phosphorus Aluminium and Nitrogen based 1 3 mm Lasers
GÖNÜL B, Oduncuoğlu M
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16 |
Comparative Study of the Band offset Ratio of Conventionally Strained and Strain compensated InGaAs GaAs QW Lasers
Toktamış Hüseyin, GÖNÜL Beşire, Oduncuoğlu Murat
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17 |
Influence of Doping on Gain Characteristics of GaInNAs GaAs Quantum Well Lasers
GÖNÜL B, Oduncuoğlu M, Dindaroğlu S, Yağdıran B
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18 |
Supersymmetric Approach To Exactly Solvable Systems With Position Dependent Masses
GÖNÜL BÜLENT,GÖNÜL BEŞİRE,DİLEK TUTCU,ÖZER OKAN
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19 |
Exact Solutions of Effective mass Schrodinger Equations
GÖNÜL BÜLENT,ÖZER OKAN,GÖNÜL BEŞİRE,ÜZGÜN FATMA
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20 |
The Analysis of the Variation of Threshold Current with Pressure in Semiconductor Quantum Well Lasers
Gönül B
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21 |
Influence of Effective Mass and Energy Band Splittings on the Radiative Characteristics of QW Lasers at Transparency
Gönül Beşire
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22 |
Hydrostatic Pressure Dependence of the Threshold Current in 1 5 m Strained Quantum well Lasers
Adams A R, Silver M, OReilly E P, Gönül B , Phıllıps AF , Sweeney SJ, and Thıjs PJA,
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23 |
Evaluation of Various Approximations Used in the Envelope function Method
A T MENEY,GÖNÜL BEŞİRE,E P O REILLY
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Projeler
3 ADET1 |
GaP altlıklı özgün GaNxAsyP1 x y GaP kuantum kuyu lazerinin eşik akımının hidrostatik basınca bağımlılığı
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2 |
1 Bildiklerini Bana da Öğretir misin
Toplumsal Duyarlılık Projesi
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3 |
2 Gezegenevi Rehberliği
Toplumsal Duyarlılık Projesi
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Yönetilen Tezler
| Durum | Tez Adı | Hazırlayan | Kaynak | ||
|---|---|---|---|---|---|
| 1 | Tamamlandı | Computational modelling of highly mis-matched alloys of GaNAsP and GaNAsBi as a laser gain material |
ÖMER LÜTFİ ÜNSAL | TezMerkezi | 2016 |
| 2 | Tamamlandı | Modeling of the atomic structure and electronic properties of highly mismatched Amorphous GaNAs alloys |
EBRU BAKIR KANDEMİR | TezMerkezi | 2013 |
| 3 | Tamamlandı | Theoretical investigation of the effect of nitrogen on optical and electronic properties of GaInAsN semiconductors |
KORAY KÖKSAL | TezMerkezi | 2009 |
| 4 | Tamamlandı | A theoretical analysis of GaInNAs/GaAs quantum vells for long wavelength emission |
MURAT ODUNCUOĞLU | TezMerkezi | 2004 |
| Durum | Tez Adı | Hazırlayan | Kaynak | ||
|---|---|---|---|---|---|
| 1 | Tamamlandı | Band to band tunneling in highly-mismatched semiconductors |
ERBİL ESEN | TezMerkezi | 2024 |
| 2 | Tamamlandı | Theoretical investigation of the band gap of GaAs1-xBix |
RABİA GÜREL | TezMerkezi | 2024 |
| 3 | Tamamlandı | Spectral detector characterization |
SABİHA YARLUĞKAL | TezMerkezi | 2019 |
| 4 | Tamamlandı | Modelling of novel bismide alloys for optoelectronic devices |
NURETTİN GÖKDENİZ | TezMerkezi | 2019 |
| 5 | Tamamlandı | A theoretical search on the effects of nitrogen and aluminium on band offset of GaNxAsyP1-x-y/AlxGa1-xP material system |
MEHMET TEMİZ | TezMerkezi | 2013 |
| 6 | Tamamlandı | Revealing the Effects of Nitrogen and non-radiative Auger Recombination Processes in GaNxAsyP1-x-y/GaP type I QW by Hydrostatic Pressure |
SHAZA ALİ YOUSF | TezMerkezi | 2012 |
| 7 | Tamamlandı | Investigation of the band alignment of long wavelength InGa(N)As(Sb) quantum wells on GaAs and InP substrates |
EBRU BAKIR | TezMerkezi | 2007 |
| 8 | Tamamlandı | Effect of nitrogen incorporation into GaInAs/GaAs grown on (111) substrates |
MEHMET KAYA | TezMerkezi | 2006 |
| 9 | Tamamlandı | A Theoretical study of the III-N-V quantum well lasers |
BİLAL YAĞDIRAN | TezMerkezi | 2003 |
| 10 | Tamamlandı | Band-offset ratio calculations of nitrogen containing III-V quantum wells |
FATMA KOÇAK | TezMerkezi | 2003 |
| 11 | Tamamlandı | Theoretical investigation of strain-compensated laser structures |
HÜSEYİN TOKTAMIŞ | TezMerkezi | 2002 |
| 12 | Tamamlandı | Modelling of gain, differential gain, index change and linewidth enhancement factor for quantum well lasers |
SEMRA DİNDAROĞLU | TezMerkezi | 2002 |
| 13 | Tamamlandı | Effects of growth orientation on the properties of strained semiconductor quantum well lasers |
MURAT ODUNCUOĞLU | TezMerkezi | 2000 |
İdari Görevler
5 ADET-
2013 -
Yurt İçiAnabilim Dalı Başkanı
GAZİANTEP ÜNİVERSİTESİ ,
-
2010 - 2011
Yurt İçiEğitim Koordinatörü
GAZİANTEP ÜNİVERSİTESİ ,
-
2007 - 2007
Yurt İçiBölüm Başkanı
GAZİANTEP ÜNİVERSİTESİ ,
-
2004 - 2010
Yurt İçiAnabilim Dalı Başkanı
GAZİANTEP ÜNİVERSİTESİ ,
-
1996 - 2001
Yurt İçiAnabilim Dalı Başkanı
GAZİANTEP ÜNİVERSİTESİ ,
Üniversite Dışı Deneyim
1 ADET1 |
Gaziantep Üniversitesi
Öğretim Üyesi
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